@inproceedings{f66b2e8e6c284933a3bc718cd07596ce,
title = "Studying edge losses in silicon heterojunction solar cells",
abstract = "In this manuscript we study the impact of edge losses in silicon heterojunction solar cells. The edge of the cells may play a larger role due to the large diffusion length of the carriers and the presence of a high conductive layer in this type of architecture. We fabricate silicon heterojunction solar cells with different areas and masking schemes to evaluate the impact of the edge on the open-circuit voltage. We measured lower open-circuit voltages on cells which have larger ratio of cell perimeter-to-area but have similar lifetimes and similar implied characteristics. The solar cell with 6 cm2 shows open-circuit voltage 7 mV lower than the cell with 150.3 cm2. Electroluminescence and photoluminescence imaging are used to evaluate the diffusion of carriers at the edges of the cells. We show the out diffusion of carriers at the edges of the cell which demonstrates the cell is affected by the surroundings.",
keywords = "edge recombination, open-circuit voltage loss, silicon",
author = "Pradeep Balaji and Stuart Bowden and Andre Augusto",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300984",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2203--2206",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
}