Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

Richard R. King

doi:10.1109/16.81632

Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

Richard R. King

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Abstract

The emitter saturation current density J₀ was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J₀ measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO₂ interface was extracted for surface boron concentrations from 3 × 10¹⁷ to 3 × 10¹⁹ cm^-3.

Original language	English (US)
Pages (from-to)	1399-1409
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	6
DOIs	https://doi.org/10.1109/16.81632
State	Published - Jun 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{c9088b32c2f442b9936fbe17d5c812ae,

title = "Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity",

abstract = "The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.",

author = "King, {Richard R.}",

note = "Funding Information: Manuscript received April 17. 1990; revised November 16, 1990. This work was funded by the Department of Energy through Sandia National Laboratories under Contract 75-6318. The review of this paper was arranged by Associate Editor M. D. Feuer. R. R. King was with the Solid State Electronics Laboratories, Stanford University, Stanford, CA 94305. He is now with the School of Electrical Engineering, Georgia Institute of Technology, Atlanta. GA 30332-0250. R. M. Swanson is with SunPower Corporation, Mountain View, CA 94043, on leave from the Solid State Electronics Laboratories, Stanford University, Stanford, CA 94305. IEEE Log Number 9143756.",

year = "1991",

month = jun,

doi = "10.1109/16.81632",

language = "English (US)",

volume = "38",

pages = "1399--1409",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T2 - Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

AU - King, Richard R.

N1 - Funding Information: Manuscript received April 17. 1990; revised November 16, 1990. This work was funded by the Department of Energy through Sandia National Laboratories under Contract 75-6318. The review of this paper was arranged by Associate Editor M. D. Feuer. R. R. King was with the Solid State Electronics Laboratories, Stanford University, Stanford, CA 94305. He is now with the School of Electrical Engineering, Georgia Institute of Technology, Atlanta. GA 30332-0250. R. M. Swanson is with SunPower Corporation, Mountain View, CA 94043, on leave from the Solid State Electronics Laboratories, Stanford University, Stanford, CA 94305. IEEE Log Number 9143756.

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N2 - The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

AB - The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent bandgap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 × 1017 to 3 × 1019 cm-3.

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JF - IEEE Transactions on Electron Devices

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ER -

Studies of Diffused Boron Emitters: Saturation Current, Bandgap Narrowing, and Surface Recombination Velocity

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