Structure, vibrations and electronic transport in silicon suboxides: Application to physical unclonable functions

C. Ugwumadu, K. N. Subedi, R. Thapa, P. Apsangi, S. Swain, M. N. Kozicki, D. A. Drabold

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This work focuses on the structure and electronic transport in atomistic models of silicon suboxides (a-SiOx; x = 1.3,1.5 and 1.7) used in the fabrication of a Physical Unclonable Function (PUF) devices. Molecular dynamics and density functional theory simulations were used to obtain the structural, electronic, and vibrational properties that contribute to electronic transport in a-SiOx. The percentage of Si-[Si1, O3] and Si-[Si3, O1], observed in a-SiO1.3, decrease with increasing O ratio. Vibrations in a-SiOx showed peaks that result from topological defects. The electronic conduction path in a-SiOx favored Si-rich regions and Si atoms with dangling bonds formed charge-trapping sites. For doped a-SiOx, the type of doping results in new conduction paths, hence qualifying a-SiOx as a viable candidate for PUF fabrication as reported by Kozicki [Patent-Publication-No.: US2021/0175185A1, 2021].

Original languageEnglish (US)
Article number100179
JournalJournal of Non-Crystalline Solids: X
Volume18
DOIs
StatePublished - Jun 2023
Externally publishedYes

Keywords

  • DFT
  • Molecular dynamics
  • PUF
  • Silicon
  • Suboxides
  • Tersoff

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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