Structure and growth of the interface of Pd on a-Si:H

R. J. Nemanich; C. C. Tsai; T. W. Sigmon

doi:10.1103/PhysRevB.23.6828

Structure and growth of the interface of Pd on a-Si:H

R. J. Nemanich, C. C. Tsai, T. W. Sigmon

Research output: Contribution to journal › Review article › peer-review

13 Scopus citations

Abstract

The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.

Original language	English (US)
Pages (from-to)	6828-6831
Number of pages	4
Journal	Physical Review B
Volume	23
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.23.6828
State	Published - 1981
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.23.6828

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title = "Structure and growth of the interface of Pd on a-Si:H",

abstract = "The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.",

author = "Nemanich, {R. J.} and Tsai, {C. C.} and Sigmon, {T. W.}",

year = "1981",

doi = "10.1103/PhysRevB.23.6828",

language = "English (US)",

volume = "23",

pages = "6828--6831",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "12",

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TY - JOUR

T1 - Structure and growth of the interface of Pd on a-Si:H

AU - Nemanich, R. J.

AU - Tsai, C. C.

AU - Sigmon, T. W.

PY - 1981

Y1 - 1981

N2 - The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.

AB - The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.

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U2 - 10.1103/PhysRevB.23.6828

DO - 10.1103/PhysRevB.23.6828

M3 - Review article

AN - SCOPUS:34547870724

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VL - 23

SP - 6828

EP - 6831

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -

Structure and growth of the interface of Pd on a-Si:H

Abstract

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