The structure of the Pd a-Si:H interface is probed using interference-enhanced Raman scattering. It was found that 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd a-Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.
ASJC Scopus subject areas
- Condensed Matter Physics