Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

R. Roucka; Y. J. An; Andrew Chizmeshya; V. R. D'Costa; J. Tolle; Jose Menendez; John Kouvetakis

doi:10.1016/j.sse.2008.07.013

Structural and optical properties of ZrB₂ and Hf_xZr_1-xB₂ films grown by vicinal surface epitaxy on Si(1 1 1) substrates

R. Roucka, Y. J. An, Andrew Chizmeshya, V. R. D'Costa, J. Tolle, Jose Menendez, John Kouvetakis

Research output: Contribution to journal › Letter › peer-review

8 Scopus citations

Abstract

ZrB₂ and Hf_xZr_1-xB₂ films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH₄)₄ and Zr(BH₄)₄. The films display superior structural and optical properties when compared with ZrB₂ films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

Original language	English (US)
Pages (from-to)	1687-1690
Number of pages	4
Journal	Solid-State Electronics
Volume	52
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2008.07.013
State	Published - Nov 2008

Keywords

Diborides nitride epitaxy silicon substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2008.07.013

Cite this

@article{36c2aeea5a044073925c3c1e1d698b11,

title = "Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates",

abstract = "ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.",

keywords = "Diborides nitride epitaxy silicon substrate",

author = "R. Roucka and An, {Y. J.} and Andrew Chizmeshya and D'Costa, {V. R.} and J. Tolle and Jose Menendez and John Kouvetakis",

note = "Funding Information: The work was supported by Science Foundation of Arizona and by the Air Force Office of Scientific Research under grant FA9550-60-01-0442 (MURI program).",

year = "2008",

month = nov,

doi = "10.1016/j.sse.2008.07.013",

language = "English (US)",

volume = "52",

pages = "1687--1690",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

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TY - JOUR

T1 - Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

AU - Roucka, R.

AU - An, Y. J.

AU - Chizmeshya, Andrew

AU - D'Costa, V. R.

AU - Tolle, J.

AU - Menendez, Jose

AU - Kouvetakis, John

N1 - Funding Information: The work was supported by Science Foundation of Arizona and by the Air Force Office of Scientific Research under grant FA9550-60-01-0442 (MURI program).

PY - 2008/11

Y1 - 2008/11

N2 - ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

AB - ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

KW - Diborides nitride epitaxy silicon substrate

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