Abstract
Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.
Original language | English (US) |
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Pages (from-to) | 2889-2891 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 17 |
DOIs | |
State | Published - Apr 28 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)