Structural and electrical properties of epitaxial YBCO films on Si

D. K. Fork; A. Barrera; Julia M. Phillips; Nathan Newman; D. B. Fenner; T. H. Geballe; G. A N Connell; J. B. Boyce

Structural and electrical properties of epitaxial YBCO films on Si

D. K. Fork, A. Barrera, Julia M. Phillips, Nathan Newman, D. B. Fenner, T. H. Geballe, G. A N Connell, J. B. Boyce

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Efforts to grow high quality films of YBCO on Si have been discussed. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. It is possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO ₃ and LaAlO ₃. Preliminary measurements of microwave properties appear promising.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Rajendra Singh, J. Narayan, David T. Shaw
Publisher	Publ by Int Soc for Optical Engineering
Pages	202
Number of pages	1
Volume	1394
State	Published - 1991
Externally published	Yes
Event	Progress in High-Temperature Superconducting Transistors and Other Devices - Santa Clara, CA, USA Duration: Oct 4 1990 → Oct 5 1990

Other

Other	Progress in High-Temperature Superconducting Transistors and Other Devices
City	Santa Clara, CA, USA
Period	10/4/90 → 10/5/90

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Fork, D. K., Barrera, A., Phillips, J. M., Newman, N., Fenner, D. B., Geballe, T. H., Connell, G. A. N., & Boyce, J. B. (1991). Structural and electrical properties of epitaxial YBCO films on Si. In R. Singh, J. Narayan, & D. T. Shaw (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1394, pp. 202). Publ by Int Soc for Optical Engineering.

Structural and electrical properties of epitaxial YBCO films on Si. / Fork, D. K.; Barrera, A.; Phillips, Julia M. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Rajendra Singh; J. Narayan; David T. Shaw. Vol. 1394 Publ by Int Soc for Optical Engineering, 1991. p. 202.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fork, DK, Barrera, A, Phillips, JM, Newman, N, Fenner, DB, Geballe, TH, Connell, GAN & Boyce, JB 1991, Structural and electrical properties of epitaxial YBCO films on Si. in R Singh, J Narayan & DT Shaw (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1394, Publ by Int Soc for Optical Engineering, pp. 202, Progress in High-Temperature Superconducting Transistors and Other Devices, Santa Clara, CA, USA, 10/4/90.

@inproceedings{6d2897201c6443bc87275d3aa3657943,

title = "Structural and electrical properties of epitaxial YBCO films on Si",

abstract = "Efforts to grow high quality films of YBCO on Si have been discussed. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. It is possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO 3 and LaAlO 3. Preliminary measurements of microwave properties appear promising. ",

author = "Fork, {D. K.} and A. Barrera and Phillips, {Julia M.} and Nathan Newman and Fenner, {D. B.} and Geballe, {T. H.} and Connell, {G. A N} and Boyce, {J. B.}",

year = "1991",

language = "English (US)",

volume = "1394",

pages = "202",

editor = "Rajendra Singh and J. Narayan and Shaw, {David T.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

note = "Progress in High-Temperature Superconducting Transistors and Other Devices ; Conference date: 04-10-1990 Through 05-10-1990",

}

TY - GEN

T1 - Structural and electrical properties of epitaxial YBCO films on Si

AU - Fork, D. K.

AU - Barrera, A.

AU - Phillips, Julia M.

AU - Newman, Nathan

AU - Fenner, D. B.

AU - Geballe, T. H.

AU - Connell, G. A N

AU - Boyce, J. B.

PY - 1991

Y1 - 1991

N2 - Efforts to grow high quality films of YBCO on Si have been discussed. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. It is possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO 3 and LaAlO 3. Preliminary measurements of microwave properties appear promising.

AB - Efforts to grow high quality films of YBCO on Si have been discussed. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. It is possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO 3 and LaAlO 3. Preliminary measurements of microwave properties appear promising.

UR - http://www.scopus.com/inward/record.url?scp=0025846458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025846458&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025846458

VL - 1394

SP - 202

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Singh, Rajendra

A2 - Narayan, J.

A2 - Shaw, David T.

PB - Publ by Int Soc for Optical Engineering

T2 - Progress in High-Temperature Superconducting Transistors and Other Devices

Y2 - 4 October 1990 through 5 October 1990

ER -

Structural and electrical properties of epitaxial YBCO films on Si

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