Strong spin-lattice coupling in CrSiTe3

L. D. Casto, A. J. Clune, M. O. Yokosuk, J. L. Musfeldt, T. J. Williams, H. L. Zhuang, M. W. Lin, K. Xiao, R. G. Hennig, B. C. Sales, J. Q. Yan, D. Mandrus

Research output: Contribution to journalArticlepeer-review

197 Scopus citations


CrSiTe3 has attracted recent interest as a candidate single-layer ferromagnetic semiconductor, but relatively little is known about the bulk properties of this material. Here, we report single-crystal X-ray diffraction, magnetic properties, thermal conductivity, vibrational, and optical spectroscopies and compare our findings with complementary electronic structure and lattice dynamics principles calculations. The high temperature paramagnetic phase is characterized by strong spin-lattice interactions that give rise to glassy behavior, negative thermal expansion, and an optical response that reveals that CrSiTe3 is an indirect gap semiconductor with indirect and direct band gaps at 0.4 and 1.2 eV, respectively. Measurements of the phonons across the 33 K ferromagnetic transition provide additional evidence for strong coupling between the magnetic and lattice degrees of freedom. The Si-Te stretching and Te displacement modes are sensitive to the magnetic ordering transition, a finding that we discuss in terms of the superexchange mechanism. Spin-lattice coupling constants are also extracted.

Original languageEnglish (US)
Article number041515
JournalAPL Materials
Issue number4
StatePublished - Apr 1 2015
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering


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