Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems

D. Chandrasekhar; J. McMurran; David Smith; John Kouvetakis; J. D. Lorentzen; Jose Menendez

doi:10.1063/1.121294

Strategies for the synthesis of highly concentrated Si_1-yC_y diamond-structured systems

D. Chandrasekhar, J. McMurran, David Smith, John Kouvetakis, J. D. Lorentzen, Jose Menendez

Research output: Contribution to journal › Article › peer-review

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Abstract

Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si_1-yC_y thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH₄ with C(SiH₃)₄ or C(SiH₂Cl)₄, which are (C-H)-free precursors incorporating Si₄C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH₄ to the gas mixture had a remarkable effect on growth rates and film crystallinity.

Original language	English (US)
Pages (from-to)	2117-2119
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	17
DOIs	https://doi.org/10.1063/1.121294
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.",

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AU - Chandrasekhar, D.

AU - McMurran, J.

AU - Smith, David

AU - Kouvetakis, John

AU - Lorentzen, J. D.

AU - Menendez, Jose

PY - 1998

Y1 - 1998

N2 - Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

AB - Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at.% were deposited at substrate temperatures of 600-740°C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C-H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity.

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Strategies for the synthesis of highly concentrated Si_1-yC_y diamond-structured systems

Abstract

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