TY - GEN
T1 - Strain Induced Indirect-Direct Bandgap Transition in Bilayer MoTe2
AU - Yu, Yueyang
AU - Ning, C. Z.
N1 - Publisher Copyright:
© 2020 OSA.
PY - 2020/5
Y1 - 2020/5
N2 - We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.
AB - We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.
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M3 - Conference contribution
AN - SCOPUS:85091658947
T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020
Y2 - 10 May 2020 through 15 May 2020
ER -