TY - JOUR
T1 - Spin relaxation of electrons and holes in zinc-blende semiconductors
AU - Yu, Z. G.
AU - Krishnamurthy, S.
AU - Van Schilfgaarde, Mark
AU - Newman, Nathan
PY - 2005/6/15
Y1 - 2005/6/15
N2 - We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.
AB - We develop a procedure to calculate spin relaxation times of electrons and holes in semiconductors using full band structures. The spin-orbit (SO) interaction is included in the unperturbed Hamiltonian. With the use of spin projection operators, we calculate electron and hole spin relaxation from both Elliott-Yafet and D'yakonov-Perel' mechanisms, and quantitatively explain measurements of GaAs. The predicted relaxation times of GaN are longer for electrons, but shorter for holes. We find that the valence band SO splitting at the zone center is not a good indicator of SO coupling for electrons.
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U2 - 10.1103/PhysRevB.71.245312
DO - 10.1103/PhysRevB.71.245312
M3 - Article
AN - SCOPUS:28244497018
SN - 1098-0121
VL - 71
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
M1 - 245312
ER -