Spectroscopy of a silicon quantum dot

M. Khoury, M. J. Rack, A. Gunther, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


We have fabricated a silicon quantum dot embedded in a metal-oxide-semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another.

Original languageEnglish (US)
Pages (from-to)1576-1578
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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