Spatial variations of optical properties of semipolar InGaN quantum wells

Saulius Marcinkevičius, Kristina Gelžinyte, Ruslan Ivanov, Yuji Zhao, Shuji Nakamura, Steven P. Denbaars, James S. Speck

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Spatial variations of band potentials and properties of carrier recombination were examined in semipolar (2021) plane InGaN/GaN single quantum wells by scanning near-field photoluminescence (PL) spectroscopy. The quantum wells had In content from 0.11 to 0.36 and were emitting from violet to yellow-green. Near-field scans showed small PL peak energy and linewidth variations with standard deviations below 10 meV, which confirms small alloy composition variations in the quantum wells. The scans revealed large, ∼5 to 10 μm size areas of similar PL parameter values, as opposed to 100 nm scale variations, often reported for InGaN wells. With increased excitation power, an untypical photoluminescence peak energy shift to lower energies was observed. The shift was attributed to density dependent carrier redistribution between nm-scale sites of different potentials. The experimental results show that in the (2021) plane InGaN quantum wells the localization potentials are shallow and the recombination properties are spatially rather uniform, which confirms the high potential of these QWs for photonic applications.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
ISBN (Electronic)9781628414530
StatePublished - 2015
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: Feb 9 2015Feb 12 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherGallium Nitride Materials and Devices X
Country/TerritoryUnited States
CitySan Francisco


  • InGaN
  • LED
  • SNOM
  • near-field
  • photoluminescence
  • quantum well
  • semipolar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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