An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (R ON, sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic R ON, sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based R ON, sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)