Space charge limited corrections to the power figure of merit for diamond

Harshad Surdi; Trevor Thornton; Robert J. Nemanich; Stephen M. Goodnick

doi:10.1063/5.0087059

Space charge limited corrections to the power figure of merit for diamond

Harshad Surdi, Trevor Thornton, Robert J. Nemanich, Stephen M. Goodnick

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (R ON, sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic R ON, sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based R ON, sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.

Original language	English (US)
Article number	223503
Journal	Applied Physics Letters
Volume	120
Issue number	22
DOIs	https://doi.org/10.1063/5.0087059
State	Published - May 30 2022

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0087059

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title = "Space charge limited corrections to the power figure of merit for diamond",

abstract = "An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (R ON, sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic R ON, sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based R ON, sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well. ",

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note = "Funding Information: This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) Grant No. DE-SC0021230. Publisher Copyright: {\textcopyright} 2022 Author(s).",

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AU - Surdi, Harshad

AU - Thornton, Trevor

AU - Nemanich, Robert J.

AU - Goodnick, Stephen M.

N1 - Funding Information: This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) Grant No. DE-SC0021230. Publisher Copyright: © 2022 Author(s).

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N2 - An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (R ON, sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic R ON, sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based R ON, sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.

AB - An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (R ON, sp) derived from the space charge limited current-voltage relationship (Mott-Gurney square law). The limitations of the traditional Ohmic R ON, sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott-Gurney based R ON, sp is confirmed by Silvaco ATLAS drift-diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.

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Space charge limited corrections to the power figure of merit for diamond

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