Solution-based n-type doping in metal oxides for next-generation solar cells

M. Tao, X. Han, K. Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Solution-based doping methods are particularly suitable for low-cost, high-throughput and large-area processing of next-generation solar cells. In this paper, we review our recent progress in n-type doping of metal oxides during electrochemical deposition of these materials, including ZnO and Cu 2O. For naturally n-type ZnO, n-type doping is achieved by substituting the cation (Zn) with a group III element (Al or Ga). In naturally p-type Cu2O, n-type doping is realized by substituting the anion (O) with a halogen (Cl or Br). The latter is of particular interest since it is in principle a universal n-type doping technique for all chalcogenides, while cation substitution has to be worked out on a case-by-case basis depending on the cation valence. In both cases, the doping mechanism is believed to be co-precipitation of either ZnO with dopant oxide (Al2O3 or Ga2O3) or Cu2O with Cu halide (CuCl or CuBr). Several 3rd-generation concepts are enabled by these solution-based doping methods, including 1) a radial p-n junction in chalcogenide nanowires for enhanced charge separation at the organic/inorganic interface and 2) a 3-dimentional p-n junction through chalcogenide nanowires as a new cell architecture for next-generation inorganic solar cells.

Original languageEnglish (US)
Title of host publicationPhotovoltaics for the 21st Century 5
PublisherElectrochemical Society Inc.
Number of pages12
ISBN (Electronic)9781566777827
ISBN (Print)9781566777827
StatePublished - 2009
Externally publishedYes

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • General Engineering


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