Solid-state electrochemical nanoimprinting of copper

Peter L. Schultz; Keng H. Hsu; Nicholas X. Fang; Placid M. Ferreira

doi:10.1116/1.2799977

Solid-state electrochemical nanoimprinting of copper

Peter L. Schultz, Keng H. Hsu, Nicholas X. Fang, Placid M. Ferreira

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

Original language	English (US)
Pages (from-to)	2419-2424
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	6
DOIs	https://doi.org/10.1116/1.2799977
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Solid-state electrochemical nanoimprinting of copper",

abstract = "For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 {\AA}s without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.",

author = "Schultz, {Peter L.} and Hsu, {Keng H.} and Fang, {Nicholas X.} and Ferreira, {Placid M.}",

note = "Funding Information: This research was supported by NSF through the Center for Chemical-Electrical-Mechanical Manufacturing Systems (Nano-CEMMS) under Grant No. DMI-0312862, the Office of Naval Research under Grant No. N00173-07-G013, and the University of Illinois through the Grainger Foundation grant. The authors are grateful that part of this work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-ER45439.",

year = "2007",

doi = "10.1116/1.2799977",

language = "English (US)",

volume = "25",

pages = "2419--2424",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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T1 - Solid-state electrochemical nanoimprinting of copper

AU - Schultz, Peter L.

AU - Hsu, Keng H.

AU - Fang, Nicholas X.

AU - Ferreira, Placid M.

N1 - Funding Information: This research was supported by NSF through the Center for Chemical-Electrical-Mechanical Manufacturing Systems (Nano-CEMMS) under Grant No. DMI-0312862, the Office of Naval Research under Grant No. N00173-07-G013, and the University of Illinois through the Grainger Foundation grant. The authors are grateful that part of this work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-ER45439.

PY - 2007

Y1 - 2007

N2 - For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

AB - For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication.

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ER -

Solid-state electrochemical nanoimprinting of copper

Abstract

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