Solid electrolyte memory for flexible electronics

Sunil R. Baliga, Sarath C. Puthen Thermadam, Deepak Kamalanathan, David Allee, Michael Kozicki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

Original languageEnglish (US)
Title of host publicationProc. - Non-Volatile Mem. Technol. Symp., NVMTS
PublisherIEEE Computer Society
Number of pages5
ISBN (Print)1424413621, 9781424413621
StatePublished - 2007
Event8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 - Albuquerque, NM, United States
Duration: Nov 10 2007Nov 13 2007

Publication series

NameProceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07


Other8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07
Country/TerritoryUnited States
CityAlbuquerque, NM


  • Flexible substrate
  • PMC memory
  • TFT driver
  • Thin-film technology

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering


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