Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Eunpa Kim, Changhyun Ko, Kyunghoon Kim, Yabin Chen, Joonki Suh, Sang Gil Ryu, Kedi Wu, Xiuqing Meng, Aslihan Suslu, Sefaattin Tongay, Junqiao Wu, Costas P. Grigoropoulos

Research output: Contribution to journalArticlepeer-review

104 Scopus citations


Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

Original languageEnglish (US)
Pages (from-to)341-346
Number of pages6
JournalAdvanced Materials
Issue number2
StatePublished - Jan 13 2016


  • 2D materials
  • field-effect transistors
  • laser-assisted doping
  • site selective
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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