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Single electron effects in silicon quantum dots in a MOSFET structure
M. Khoury
, A. Gunther
, M. J. Rack
, D. P. Pivin
, D. K. Ferry
Solid State Electronics Research Center (CSSER)
Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
Research output
:
Contribution to journal
›
Conference article
›
peer-review
2
Scopus citations
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Keyphrases
Silicon Quantum Dots (Si QDs)
100%
Top Gate
100%
MOSFET Structure
100%
Single Electron Effects
100%
Magnetic Field
50%
Low Temperature
50%
Quantum Effects
50%
Device-independent
50%
MOSFET
50%
Long Channel
50%
Quantum Dots
50%
Quantum Dot Devices
50%
Inversion Layer
50%
Fermi Energy
50%
Dot Size
50%
Electrostatic Confinement
50%
Lateral Gate
50%
Dual Gate
50%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Single Electron
100%
Quantum Dot
100%
Electron Effect
100%
Low-Temperature
33%
Magnetic Field
33%
Quantum Effect
33%
Fermi Energy
33%
Material Science
Silicon
100%
Quantum Dot
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Physics
Quantum Dot
100%
Field Effect Transistor
100%
Magnetic Field
33%
Electrostatics
33%