Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Chloe A M Fabien; Michael Moseley; Brendan Gunning; W. Alan Doolittle; Alec M. Fischer; Yong O. Wei; Fernando Ponce

doi:10.1109/JPHOTOV.2013.2292748

Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Chloe A M Fabien
, Michael Moseley
, Brendan Gunning
, W. Alan Doolittle
, Alec M. Fischer
, Yong O. Wei
, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

Original language	English (US)
Article number	6683005
Pages (from-to)	601-606
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2292748
State	Published - Mar 2014

Keywords

Crystal microstructure
doping
indium gallium nitride (InGaN)
semiconductor device modeling
semiconductor growth
solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2013.2292748

Cite this

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title = "Simulations, practical limitations, and novel growth technology for InGaN-based solar cells",

abstract = "Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11\%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.",

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language = "English (US)",

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T1 - Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

AU - Fabien, Chloe A M

AU - Moseley, Michael

AU - Gunning, Brendan

AU - Doolittle, W. Alan

AU - Fischer, Alec M.

AU - Wei, Yong O.

AU - Ponce, Fernando

PY - 2014/3

Y1 - 2014/3

N2 - Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

AB - Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

KW - Crystal microstructure

KW - doping

KW - indium gallium nitride (InGaN)

KW - semiconductor device modeling

KW - semiconductor growth

KW - solar cell

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M3 - Article

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Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Abstract

Keywords

ASJC Scopus subject areas

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