@inproceedings{54dae86373234c60b9f12ea99c9d7297,
title = "Simulations for optimized piezoresistors",
abstract = "As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused junctions that have steep gaussian profile, and short distances between electrodes, piezoresistive coefficients differ significantly from those for uniformly doped samples. This paper considers effects of doping profile, electric field level and its distribution on free carrier mobility in order to asses sensitivity of piezoresistors. Simulated performance over temperature range is analyzed as well.",
keywords = "Diffused piezoresistors, Mobility, Shallow junctions",
author = "Dragan Mladenovic and Dragica Vasileska",
year = "2000",
month = dec,
day = "1",
language = "English (US)",
isbn = "0966613570",
series = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000",
pages = "106--109",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000",
note = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 ; Conference date: 27-03-2000 Through 29-03-2000",
}