Silicon-Based Cooling Elements

David Leadley; Martin Prest; Jouni Ahopelto; Tom Brien; David Gunnarsson; Philip Mauskopf; Juha Muhonen; Maksym Myronov; Hung Nguyen; Evan Parker; Mika Prunnila; James Richardson-Bullock; Vishal Shah; Terry Whall; Qing Tai Zhao

doi:10.1002/9781118984772.ch11

Silicon-Based Cooling Elements

David Leadley, Martin Prest, Jouni Ahopelto, Tom Brien, David Gunnarsson, Philip Mauskopf, Juha Muhonen, Maksym Myronov, Hung Nguyen, Evan Parker, Mika Prunnila, James Richardson-Bullock, Vishal Shah, Terry Whall, Qing Tai Zhao

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

Original language	English (US)
Title of host publication	Beyond CMOS Nanodevices 1
Publisher	Wiley-Blackwell
Pages	303-330
Number of pages	28
Volume	9781848216549
ISBN (Electronic)	9781118984772
ISBN (Print)	9781848216549
DOIs	https://doi.org/10.1002/9781118984772.ch11
State	Published - Jun 23 2014

Keywords

Carrier-phonon coupling
Silicon cold electron bolometer
Silicon-based Schottky barrier junctions
Superconductor-semiconductor (S-Sm) cooler
Unstrained silicon

ASJC Scopus subject areas

Engineering(all)

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10.1002/9781118984772.ch11

Cite this

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title = "Silicon-Based Cooling Elements",

abstract = "This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.",

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doi = "10.1002/9781118984772.ch11",

language = "English (US)",

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AU - Leadley, David

AU - Prest, Martin

AU - Ahopelto, Jouni

AU - Brien, Tom

AU - Gunnarsson, David

AU - Mauskopf, Philip

AU - Muhonen, Juha

AU - Myronov, Maksym

AU - Nguyen, Hung

AU - Parker, Evan

AU - Prunnila, Mika

AU - Richardson-Bullock, James

AU - Shah, Vishal

AU - Whall, Terry

AU - Zhao, Qing Tai

PY - 2014/6/23

Y1 - 2014/6/23

N2 - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

AB - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

KW - Carrier-phonon coupling

KW - Silicon cold electron bolometer

KW - Silicon-based Schottky barrier junctions

KW - Superconductor-semiconductor (S-Sm) cooler

KW - Unstrained silicon

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M3 - Chapter

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SP - 303

EP - 330

BT - Beyond CMOS Nanodevices 1

PB - Wiley-Blackwell

ER -

Silicon-Based Cooling Elements

Abstract

Keywords

ASJC Scopus subject areas

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