Si-Ge-Sn technologies: From molecules to materials to prototype devices

John Kouvetakis, J. Tolle, J. Mathews, R. Roucka, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


We report new approaches based on rational design and preparation of chemical vapor deposition precursors involving novel main-group hydrides to fabricate new families of Si-based semiconductors and prototype devices that display compositional and structural inheritance, from the parent molecule to the solid end-product. This methodology enables materials synthesis at extraordinarily low temperatures that are compatible with CMOS processing/selective growth, and provides the means for obtaining highly metastable strain states in prototype structures that cannot be obtained by conventional protocols. Some of the materials and devices under development, involving alloys in the Si-Ge-Sn system, open up exciting opportunities in photodetectors and photovoltaics because they grow directly on cheap Si substrates and cover an extended range of the near-infrared spectrum that is not accessible to current photovoltaic and optoelectronic group IV semiconductors.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Number of pages14
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
StatePublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • General Engineering


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