Sequential tunneling transport in GaN/AlGaN quantum cascade structures

Faisal F. Sudradjat, Wei Zhang, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore D. Moustakas, Roberto Paiella

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We demonstrate electronic sequential tunneling transport through the ground-state subbands of GaN/Al 0.15Ga 0.85N quantum cascade structures grown on free-standing GaN substrates. A pronounced transition from a high- to a low-resistance state is observed as the applied voltage is increased. The measured current-voltage characteristics are found to vary with temperature, structure design, and polarity of the applied bias, in a way that is fully consistent with theoretical expectations. The dominant transport mechanism is determined to be scattering-assisted tunneling.

Original languageEnglish (US)
Pages (from-to)588-591
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3-4
StatePublished - Mar 1 2012


  • Electronic transport
  • III-nitride semiconductors
  • Quantum cascade structures

ASJC Scopus subject areas

  • Condensed Matter Physics


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