TY - JOUR
T1 - Sequential tunneling transport in GaN/AlGaN quantum cascade structures
AU - Sudradjat, Faisal F.
AU - Zhang, Wei
AU - Driscoll, Kristina
AU - Liao, Yitao
AU - Bhattacharyya, Anirban
AU - Thomidis, Christos
AU - Zhou, Lin
AU - Smith, David
AU - Moustakas, Theodore D.
AU - Paiella, Roberto
PY - 2012/3/1
Y1 - 2012/3/1
N2 - We demonstrate electronic sequential tunneling transport through the ground-state subbands of GaN/Al 0.15Ga 0.85N quantum cascade structures grown on free-standing GaN substrates. A pronounced transition from a high- to a low-resistance state is observed as the applied voltage is increased. The measured current-voltage characteristics are found to vary with temperature, structure design, and polarity of the applied bias, in a way that is fully consistent with theoretical expectations. The dominant transport mechanism is determined to be scattering-assisted tunneling.
AB - We demonstrate electronic sequential tunneling transport through the ground-state subbands of GaN/Al 0.15Ga 0.85N quantum cascade structures grown on free-standing GaN substrates. A pronounced transition from a high- to a low-resistance state is observed as the applied voltage is increased. The measured current-voltage characteristics are found to vary with temperature, structure design, and polarity of the applied bias, in a way that is fully consistent with theoretical expectations. The dominant transport mechanism is determined to be scattering-assisted tunneling.
KW - Electronic transport
KW - III-nitride semiconductors
KW - Quantum cascade structures
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U2 - 10.1002/pssc.201100423
DO - 10.1002/pssc.201100423
M3 - Article
AN - SCOPUS:84863387671
SN - 1862-6351
VL - 9
SP - 588
EP - 591
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 3-4
ER -