We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (20-21) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (20-21) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy