Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Ying Chen Chen

doi:10.3389/fnano.2021.772234

Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Ying Chen Chen

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

Original language	English (US)
Article number	772234
Journal	Frontiers in Nanotechnology
Volume	3
DOIs	https://doi.org/10.3389/fnano.2021.772234
State	Published - Nov 22 2021
Externally published	Yes

Keywords

fuse
OTP
resistive random-access memory
selectorless
self-rectify

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Computer Science Applications
Electrical and Electronic Engineering

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10.3389/fnano.2021.772234

Cite this

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title = "Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications",

abstract = "A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).",

keywords = "fuse, OTP, resistive random-access memory, selectorless, self-rectify",

author = "Chen, {Ying Chen}",

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N2 - A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

AB - A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

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KW - OTP

KW - resistive random-access memory

KW - selectorless

KW - self-rectify

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Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Abstract

Keywords

ASJC Scopus subject areas

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