Self-encapsulation effects on the electromigration resistance of silver lines

Terry Alford, Yuxiao Zeng, Phucanh Nguyen, Linghui Chen, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Silver, the most conductive room-temperature material, has drawn attention as a potential interconnect replacement material. In this study, Ag lines were self-encapsulated by annealing a Ag/Ti/SiO2/Si structure in a flowing NH3 ambient. The microstructure of this structure after the anneal was studied by the use of cross-section transmission electron microscopy (XTEM). Upon the anneal, the Ag surface was encapsulated by a TiN(O) layer, and a bilayer formed at the initial Ti/SiO2 interface. Electromigration testing shows that the self-encapsulation process improved the electromigration resistance of the Ag lines substantially by inhibition of the surface diffusion of Ag atoms.

Original languageEnglish (US)
Pages (from-to)389-395
Number of pages7
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Mar 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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