Abstract

In this paper we present state of the art modeling of coupled electron-phonon transport in nanoscale CMOS SOI devices, in order to elucidate from a microscopic standpoint the role of device dimensions, boundary conditions and various material strategies on self-heating in this technology.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/TerritoryChina
CityBeijing
Period5/27/095/29/09

Keywords

  • Hot phonons
  • Particle-based device simulations
  • SOI devices
  • Self-heating

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Self-consistent simulation of heating effects in nanoscale devices'. Together they form a unique fingerprint.

Cite this