Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications

Ying Chen Chen; Chao Cheng Lin; Sungjun Kim; Jack C. Lee

doi:10.1149/08903.0045ecst

Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications

Ying Chen Chen, Chao Cheng Lin, Sungjun Kim, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Selectorless resistive random-access memory (RRAM) with self-rectifying behavior is presented as a way to suppress sneak path current without an additional transistor or switch device integration, which is beneficial for reducing the cost and complexity of crossbar array fabrication. In this work, selectorless 1R-only graphite-based memristor devices have been demonstrated by utilizing the nonlinear (NL) resistive switching (RS) characteristics with well-designed operation conditions. The early stage of cycling observation as seasoning effect is investigated, while the wear-out mechanism is also discussed for the selectorless 1R-only RRAM crossbar array for high storage class memory applications.

Original language	English (US)
Title of host publication	Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9
Editors	F. Roozeboom, P. J. Timans, K. Kakushima, E. P. Gusev, Z. Karim, D. Misra, Y. S. Obeng, S. De Gendt, H. Jagannathan
Publisher	Electrochemical Society Inc.
Pages	45-51
Number of pages	7
Edition	3
ISBN (Electronic)	9781607688662, 9781607688686, 9781607688686, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs	https://doi.org/10.1149/08903.0045ecst
State	Published - 2019
Externally published	Yes
Event	International Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting - Dallas, United States Duration: May 26 2019 → May 30 2019

Publication series

Name	ECS Transactions
Number	3
Volume	89
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	International Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting
Country/Territory	United States
City	Dallas
Period	5/26/19 → 5/30/19

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/08903.0045ecst

Cite this

Chen, Y. C., Lin, C. C., Kim, S., & Lee, J. C. (2019). Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications. In F. Roozeboom, P. J. Timans, K. Kakushima, E. P. Gusev, Z. Karim, D. Misra, Y. S. Obeng, S. De Gendt, & H. Jagannathan (Eds.), Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 (3 ed., pp. 45-51). (ECS Transactions; Vol. 89, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/08903.0045ecst

Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications. / Chen, Ying Chen; Lin, Chao Cheng; Kim, Sungjun et al.
Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9. ed. / F. Roozeboom; P. J. Timans; K. Kakushima; E. P. Gusev; Z. Karim; D. Misra; Y. S. Obeng; S. De Gendt; H. Jagannathan. 3. ed. Electrochemical Society Inc., 2019. p. 45-51 (ECS Transactions; Vol. 89, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, YC, Lin, CC, Kim, S & Lee, JC 2019, Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications. in F Roozeboom, PJ Timans, K Kakushima, EP Gusev, Z Karim, D Misra, YS Obeng, S De Gendt & H Jagannathan (eds), Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9. 3 edn, ECS Transactions, no. 3, vol. 89, Electrochemical Society Inc., pp. 45-51, International Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting, Dallas, United States, 5/26/19. https://doi.org/10.1149/08903.0045ecst

Chen YC, Lin CC, Kim S, Lee JC. Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications. In Roozeboom F, Timans PJ, Kakushima K, Gusev EP, Karim Z, Misra D, Obeng YS, De Gendt S, Jagannathan H, editors, Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9. 3 ed. Electrochemical Society Inc. 2019. p. 45-51. (ECS Transactions; 3). doi: 10.1149/08903.0045ecst

Chen, Ying Chen ; Lin, Chao Cheng ; Kim, Sungjun et al. / Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications. Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9. editor / F. Roozeboom ; P. J. Timans ; K. Kakushima ; E. P. Gusev ; Z. Karim ; D. Misra ; Y. S. Obeng ; S. De Gendt ; H. Jagannathan. 3. ed. Electrochemical Society Inc., 2019. pp. 45-51 (ECS Transactions; 3).

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abstract = "Selectorless resistive random-access memory (RRAM) with self-rectifying behavior is presented as a way to suppress sneak path current without an additional transistor or switch device integration, which is beneficial for reducing the cost and complexity of crossbar array fabrication. In this work, selectorless 1R-only graphite-based memristor devices have been demonstrated by utilizing the nonlinear (NL) resistive switching (RS) characteristics with well-designed operation conditions. The early stage of cycling observation as seasoning effect is investigated, while the wear-out mechanism is also discussed for the selectorless 1R-only RRAM crossbar array for high storage class memory applications.",

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Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications

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