@inproceedings{1952f109a15f498aa1690bff2288b17d,
title = "Selector-less graphite memristor: Intrinsic nonlinear behavior with gap design method for array applications",
abstract = "The memristors in binary metal oxide structures have attracted attentions since the current nonvolatile memory (NVM) has been approaching the scaling limit. Memristors having excellent scalability, high speed, and low power operation, is desired for current hardware needs and future artificial intelligence in-memory computational hardware platform. In high-density cross-bar array architecture, selector devices are essential to suppress the sneak path current and to avoid the reading errors. Despite that the additional selector device has commonly been proposed one selector-one resistor (1S1R) design for array applications, it rises the process complexity and cost. In this work, selectorless lR-only graphite-based memristor devices have been demonstrated by utilizing the nonlinear (NL) resistive switching (RS) characteristics with SET compliance and gap design method for memristor array applications.",
author = "Chen, {Ying Chen} and Chang, {Yao Feng} and Lee, {Jack C.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Engineering Carbon Hybrids - Carbon Electronics 3 - 233rd ECS Meeting ; Conference date: 13-05-2018 Through 17-05-2018",
year = "2018",
doi = "10.1149/08501.0011ecst",
language = "English (US)",
isbn = "9781607688280",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "11--19",
editor = "R. Martinez-Duarte and Hoff, {A. M.} and M. Madou and R. Martel and C. Wang and D. Landheer and Carter, {M. T.} and Kostecki, {R. M.} and Leonte, {O. M.}",
booktitle = "ECS Transactions",
edition = "1",
}