Abstract
We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.
Original language | English (US) |
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Pages (from-to) | 740-744 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - May 2000 |
Event | MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: Jul 12 1999 → Jul 16 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics