@inproceedings{87aa017560d04d34afe0dbb7ea53a61e,
title = "Schred V2.0: Tool to model MOS capacitors",
abstract = "In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS capacitor with High-K Dielectric. Simulation results are presented which illustrate the versatility of the tool.",
keywords = "1D Schrodinger-Poisson solvers, MOS capacitors, Quantum-mechanical size quantization effect",
author = "Gokula Kannan and Dragica Vasileska",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/IWCE.2010.5677977",
language = "English (US)",
isbn = "9781424493845",
series = "2010 14th International Workshop on Computational Electronics, IWCE 2010",
pages = "211--214",
booktitle = "2010 14th International Workshop on Computational Electronics, IWCE 2010",
note = "2010 14th International Workshop on Computational Electronics, IWCE 2010 ; Conference date: 26-10-2010 Through 29-10-2010",
}