Schottky junction transistor-micropower circuits at GHz frequencies

Trevor Thornton

doi:10.1109/55.892437

Schottky junction transistor-micropower circuits at GHz frequencies

Trevor Thornton

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.

Original language	English (US)
Pages (from-to)	38-40
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/55.892437
State	Published - Jan 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.892437

Cite this

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title = "Schottky junction transistor-micropower circuits at GHz frequencies",

abstract = "Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.",

author = "Trevor Thornton",

year = "2001",

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AB - Numerical simulations of a new micropower transistor configuration are presented. The transistor is a majority carrier device that operates as a current-controlled current-source. Results from a 0.5 μm gate length device indicate a cutoff frequency in the GHz range, for drain currents appropriate to micropower circuit applications.

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Schottky junction transistor-micropower circuits at GHz frequencies

Abstract

ASJC Scopus subject areas

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