Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

Yu G. Sadofyev, Shane Johnson, S. A. Chaparro, Yu Cao, D. Ding, J. B. Wang, K. Franzreb, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0-2% and growth temperatures from 580 to 720°C was discussed. The electrical properties and surface morphology were found to be dependent on the growth temperature and the Sb flux. The Sb as an isoelectronic dopant improved electron mobility, whereas, Sb as an surfactant reduced surface roughness. The use of Sb-mediated growth has resulted in improved laser device performance, noticeably in vertical-cavity surface-emitting lasers (VCSEL). The results show that the best improvement occured in 620-680°C temperature region, elliminating the forbidden temperature gap for the device growth effectively.

Original languageEnglish (US)
Pages (from-to)3546-3548
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - May 3 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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