Abstract
A novel modeling technique is introduced in an effort to develop a physically-motivated empirical model of the deposition rate and radial deposition nonuniformity for a single-wafer Tungsten Silicide Low Pressure Chemical Vapor Deposition (LPCVD) processing step. Based on this modeling method, a run-to-run adaptive control/optimization strategy is derived with the aim to achieve prescribe values of the average deposition rate and silicon to tungsten ratio at the wafer surface, while minimizing the variation of the deposition rate across the wafer surface. The effectiveness of this control strategy is demonstrated by simulation results, using the simulation platform CFDSWR to represent the single water tungsten silicide LPCVD process.
| Original language | English (US) |
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| Title of host publication | Proceedings of the IEEE Conference on Decision and Control |
| Publisher | IEEE |
| Pages | 2474-2475 |
| Number of pages | 2 |
| Volume | 3 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 34th IEEE Conference on Decision and Control. Part 1 (of 4) - New Orleans, LA, USA Duration: Dec 13 1995 → Dec 15 1995 |
Other
| Other | Proceedings of the 1995 34th IEEE Conference on Decision and Control. Part 1 (of 4) |
|---|---|
| City | New Orleans, LA, USA |
| Period | 12/13/95 → 12/15/95 |
ASJC Scopus subject areas
- Chemical Health and Safety
- Control and Systems Engineering
- Safety, Risk, Reliability and Quality