TY - JOUR
T1 - Room-Temperature Exciton-Based Optoelectronic Switch
AU - Ye, Tong
AU - Zhou, Boxuan
AU - Liu, Zeyi
AU - Li, Yongzhuo
AU - Shen, Hongzhi
AU - Ning, Cun Zheng
AU - Li, Dehui
N1 - Funding Information:
This work was supported by National Key Research and Development Program of China (2018YFA0704403), NSFC (61674060, 62074064) and Innovation Fund of WNLO.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/2/4
Y1 - 2021/2/4
N2 - Excitons, bound pairs of electrons and holes, could act as an intermediary between electronic signal processing and optical transmission, thus speeding up the interconnection of photoelectric communication. However, up to date, exciton-based logic devices such as switches that work at room temperature are still lacking. This work presents a prototype of a room-temperature optoelectronic switch based on excitons in WSe2 monolayer. The emission intensity of WSe2 stacked on Au and SiO2 substrates exhibits completely opposite behaviors upon applying gate voltages. Such observation can be ascribed to different doping behaviors of WSe2 caused by charge-transfer and chemical-doping effect at WSe2/Au and WSe2/SiO2 interfaces, respectively, together with the charge-drift effect. These interesting features can be utilized for optoelectronic switching, confirmed by the cyclic PL switching test for a long time exceeding 4000 s. This study offers a universal and reliable approach for the fabrication of exciton-based optoelectronic switches, which would be essential in integrated nanophotonics.
AB - Excitons, bound pairs of electrons and holes, could act as an intermediary between electronic signal processing and optical transmission, thus speeding up the interconnection of photoelectric communication. However, up to date, exciton-based logic devices such as switches that work at room temperature are still lacking. This work presents a prototype of a room-temperature optoelectronic switch based on excitons in WSe2 monolayer. The emission intensity of WSe2 stacked on Au and SiO2 substrates exhibits completely opposite behaviors upon applying gate voltages. Such observation can be ascribed to different doping behaviors of WSe2 caused by charge-transfer and chemical-doping effect at WSe2/Au and WSe2/SiO2 interfaces, respectively, together with the charge-drift effect. These interesting features can be utilized for optoelectronic switching, confirmed by the cyclic PL switching test for a long time exceeding 4000 s. This study offers a universal and reliable approach for the fabrication of exciton-based optoelectronic switches, which would be essential in integrated nanophotonics.
KW - charge-drift effect
KW - exciton
KW - optoelectronic switch
KW - transition metal dichalcogenides
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U2 - 10.1002/smll.202005918
DO - 10.1002/smll.202005918
M3 - Article
C2 - 33432674
AN - SCOPUS:85099261590
SN - 1613-6810
VL - 17
JO - Small
JF - Small
IS - 5
M1 - 2005918
ER -