Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, A. Sarangan, Imad Agha, J. Kouvetakis, J. Menéndez, J. Mathews

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.

Original languageEnglish (US)
Article number075016
JournalAIP Advances
Issue number7
StatePublished - Jul 1 2022

ASJC Scopus subject areas

  • General Physics and Astronomy


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