@inproceedings{feca9566e57646439b402dfd93e685e8,
title = "Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell",
abstract = "We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on a 10 μm monocrystalline silicon substrate) and efficiencies up to 26.7% (on a 150 μm monocrystalline silicon substrate) may be possible for front-contacted devices which exhibit low interface recombination velocity (IRV) at the GaP/Si interface and which employ random pyramidal texturing, a detached silver reflector, rear locally diffused point contacts and a SiO2/Al2O3 rear oxide passivation stack.",
keywords = "heterojunctions, p-n junctions, photovoltaic cells, silicon",
author = "Steven Limpert and Kunal Ghosh and Hannes Wagner and Stuart Bowden and Christiana Honsberg and Stephen Goodnick and Stephen Bremner and Anita Ho-Baillie and Martin Green",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925045",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "836--840",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}