Response to "comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'" [solid state electron. 2004;48:335-8]

M. Tao; J. Zhu

doi:10.1016/j.sse.2004.06.020

Response to "comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'" [solid state electron. 2004;48:335-8]

M. Tao, J. Zhu

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

Original language	English (US)
Pages (from-to)	2351-2352
Number of pages	2
Journal	Solid-State Electronics
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2004.06.020
State	Published - Dec 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2004.06.020

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title = "Response to {"}comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'{"} [solid state electron. 2004;48:335-8]",

abstract = "The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.",

author = "M. Tao and J. Zhu",

year = "2004",

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doi = "10.1016/j.sse.2004.06.020",

language = "English (US)",

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AU - Tao, M.

AU - Zhu, J.

PY - 2004/12

Y1 - 2004/12

N2 - The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

AB - The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Sepassivated n-type Si(001) is negative or nearly negative.

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JO - Solid-State Electronics

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IS - 12

ER -

Response to "comment on 'negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'" [solid state electron. 2004;48:335-8]

Abstract

ASJC Scopus subject areas

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