Resonant Tunneling in the Quantum Hydrodynamic Model

Carl L. Gardner

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR. Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.

Original languageEnglish (US)
Pages (from-to)201-210
Number of pages10
JournalVLSI Design
Issue number2
StatePublished - 1995
Externally publishedYes


  • quantum hydrodynamic model
  • resonant tunneling diode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering


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