Residual defects in SIMOX: Threading dislocations and pipes

P. Roitman, M. Edelstein, S. Krause, S. Visitserngtrukul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


In the past few years, due to improved control of the ion implantation process and improved annealing sequences, a qualitative improvement has been realized in the structural quality of SIMOX films. The dense network of oxide precipitates and threading dislocations in the top silicon can be annealed out, reducing the dislocation density from ≈ 1010/cm2 to ≈ 105/cm2 or less1. CMOS transistors and circuits have been successfully fabricated in this material2. However, bipolar devices are sensitive to defect densities in this range, as is VLSI yield. Therefore the defect density must be monitored and reduced. We discuss below some techniques for monitoring dislocations and stacking faults in SIMOX films. Also, a different type of defect, a silicon "pipe" running through the buried oxide has been observed. The origin of these defects, and a technique for detecting them, will be described.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
StatePublished - 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings


Conference1990 IEEE SOS/SOI Technology Conference
Country/TerritoryUnited States
CityKey West

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Residual defects in SIMOX: Threading dislocations and pipes'. Together they form a unique fingerprint.

Cite this