Removal of SiO 2 from Si (100) by remote H 2/SiH 4 plasma prior to epitaxial growth

J. P. Barnak, H. Ying, Y. L. Chen, J. Montgomery, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


This study demonstrates the cleaning of Si(100) surfaces with a remote H 2/SiH 4 plasma. The surfaces were prepared with a chemical oxide the remains after an RCA clean. The plasma cleaning process was designed to remove contaminants such as C, F, and SiO 2. The key to successful removal of the oxide is to have the plasma chemistry in a neutral deposition regime. The neutral deposition process regime is a balance between the deposition of Si by SiH 4 and the etching of the deposited Si by atomic H. During the neutral deposition mode the SiO 2 was removed without deposition of Si on the SiO 2 surface. Once the SiO 2 layer is removed, the underlying Si surface is exposed to the H 2/SiH 4 plasma and a thin epitaxial film may be deposited. The final Si surface configuration after plasma cleaning is a 2×1 hydrogen terminated surface. The characterization of the interface and epitaxial film were investigated using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995


OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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