Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

Bo He; Zhong Quan Ma; Jing Xu; Lei Zhao; Nan Sheng Zhang; Feng Li; Cheng Shen; Ling Shen; Xia Jie Meng; Cheng Yue Zhou; Zheng Shan Yu; Yan Ting Yin

doi:10.1016/j.spmi.2009.04.013

Realization and characterization of an ITO/AZO/SiO₂ / p - Si SIS heterojunction

Bo He
, Zhong Quan Ma
, Jing Xu
, Lei Zhao
, Nan Sheng Zhang
, Feng Li
, Cheng Shen
, Ling Shen
, Xia Jie Meng
, Cheng Yue Zhou
, Zheng Shan Yu
, Yan Ting Yin

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A novel ITO/AZO/SiO₂/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10^-5 A, respectively, and the value of I_F/I_R (I_F and I_R stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

Original language	English (US)
Pages (from-to)	664-671
Number of pages	8
Journal	Superlattices and Microstructures
Volume	46
Issue number	4
DOIs	https://doi.org/10.1016/j.spmi.2009.04.013
State	Published - Oct 2009
Externally published	Yes

Keywords

Al-doped ZnO (AZO)
Current-voltage (I - V) characteristics
Indium tin oxide (ITO)
SIS heterojunction
Sputtering

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2009.04.013

Cite this

@article{6b762fe859ed4dda9fed3f4081f991a8,

title = "Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction",

abstract = "A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075{\texttimes}10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown",

keywords = "Al-doped ZnO (AZO), Current-voltage (I - V) characteristics, Indium tin oxide (ITO), SIS heterojunction, Sputtering",

author = "Bo He and Ma, \{Zhong Quan\} and Jing Xu and Lei Zhao and Zhang, \{Nan Sheng\} and Feng Li and Cheng Shen and Ling Shen and Meng, \{Xia Jie\} and Zhou, \{Cheng Yue\} and Yu, \{Zheng Shan\} and Yin, \{Yan Ting\}",

note = "Funding Information: This work was partly supported by the Natural Science Foundation of China (No. 60876045), Shanghai Leading Academic Discipline Project (S30105), Innovation Foundation of Shanghai Education Committee (No. 08YZ12), and R\&D Foundation of SHU-SOENs PV Joint Laboratory (SS-E0700601). ",

year = "2009",

month = oct,

doi = "10.1016/j.spmi.2009.04.013",

language = "English (US)",

volume = "46",

pages = "664--671",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

AU - He, Bo

AU - Ma, Zhong Quan

AU - Xu, Jing

AU - Zhao, Lei

AU - Zhang, Nan Sheng

AU - Li, Feng

AU - Shen, Cheng

AU - Shen, Ling

AU - Meng, Xia Jie

AU - Zhou, Cheng Yue

AU - Yu, Zheng Shan

AU - Yin, Yan Ting

N1 - Funding Information: This work was partly supported by the Natural Science Foundation of China (No. 60876045), Shanghai Leading Academic Discipline Project (S30105), Innovation Foundation of Shanghai Education Committee (No. 08YZ12), and R&D Foundation of SHU-SOENs PV Joint Laboratory (SS-E0700601).

PY - 2009/10

Y1 - 2009/10

N2 - A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

AB - A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

KW - Al-doped ZnO (AZO)

KW - Current-voltage (I - V) characteristics

KW - Indium tin oxide (ITO)

KW - SIS heterojunction

KW - Sputtering

UR - https://www.scopus.com/pages/publications/70249112147

UR - https://www.scopus.com/pages/publications/70249112147#tab=citedBy

U2 - 10.1016/j.spmi.2009.04.013

DO - 10.1016/j.spmi.2009.04.013

M3 - Article

AN - SCOPUS:70249112147

SN - 0749-6036

VL - 46

SP - 664

EP - 671

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -