Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

Bo He, Zhong Quan Ma, Jing Xu, Lei Zhao, Nan Sheng Zhang, Feng Li, Cheng Shen, Ling Shen, Xia Jie Meng, Cheng Yue Zhou, Zheng Shan Yu, Yan Ting Yin

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

Original languageEnglish (US)
Pages (from-to)664-671
Number of pages8
JournalSuperlattices and Microstructures
Issue number4
StatePublished - Oct 2009
Externally publishedYes


  • Al-doped ZnO (AZO)
  • Current-voltage (I - V) characteristics
  • Indium tin oxide (ITO)
  • SIS heterojunction
  • Sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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