Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

C. H. Kuo; M. Boonzaayer; M. DeHerrera; T. Kyong; Yong-Hang Zhang; B. Johs; J. S. Hale

doi:10.1116/1.589971

Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

C. H. Kuo, M. Boonzaayer, M. DeHerrera, T. Kyong, Yong-Hang Zhang, B. Johs, J. S. Hale

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have compiled the optical constants database for In_x Ga_1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the In_xGa_1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the In_xGa_1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the In_xGa_1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick In_xGa_1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the In_xGa_1-xAs composition before the growth of the complicated structure.

Original language	English (US)
Pages (from-to)	1484-1488
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.589971
State	Published - 1998

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.589971

Cite this

@article{c68f738b897247c097218e066ee1b8fb,

title = "Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer",

abstract = "We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.",

author = "Kuo, {C. H.} and M. Boonzaayer and M. DeHerrera and T. Kyong and Yong-Hang Zhang and B. Johs and Hale, {J. S.}",

year = "1998",

doi = "10.1116/1.589971",

language = "English (US)",

volume = "16",

pages = "1484--1488",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

AU - Kuo, C. H.

AU - Boonzaayer, M.

AU - DeHerrera, M.

AU - Kyong, T.

AU - Zhang, Yong-Hang

AU - Johs, B.

AU - Hale, J. S.

PY - 1998

Y1 - 1998

N2 - We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

AB - We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

UR - http://www.scopus.com/inward/record.url?scp=0342831951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342831951&partnerID=8YFLogxK

U2 - 10.1116/1.589971

DO - 10.1116/1.589971

M3 - Article

AN - SCOPUS:0342831951

SN - 1071-1023

VL - 16

SP - 1484

EP - 1488

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this