Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska; S. A. Solin; M. Selders; R. K. Chang; R. Alben; M. F. Thorpe; D. Weaire

doi:10.1103/PhysRevLett.29.725

Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska
, S. A. Solin
, M. Selders
, R. K. Chang
, R. Alben
, M. F. Thorpe
, D. Weaire

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

Original language	English (US)
Pages (from-to)	725-728
Number of pages	4
Journal	Physical Review Letters
Volume	29
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.29.725
State	Published - 1972
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.29.725

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title = "Raman scattering from phonons in polymorphs of Si and Ge",

abstract = "The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.",

author = "Kobliska, \{R. J.\} and Solin, \{S. A.\} and M. Selders and Chang, \{R. K.\} and R. Alben and Thorpe, \{M. F.\} and D. Weaire",

note = "Funding Information: Work supported by the U. S. Atomic Energy Commission under Contract No. AT(11-1)2126. It has also benefited from the general support of Materials Science at the University of Chicago provided by the Advanced Research Projects Agency. Funding Information: Research supported in part by the National Science Foundation. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

year = "1972",

doi = "10.1103/PhysRevLett.29.725",

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journal = "Physical Review Letters",

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publisher = "American Physical Society",

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T1 - Raman scattering from phonons in polymorphs of Si and Ge

AU - Kobliska, R. J.

AU - Solin, S. A.

AU - Selders, M.

AU - Chang, R. K.

AU - Alben, R.

AU - Thorpe, M. F.

AU - Weaire, D.

N1 - Funding Information: Work supported by the U. S. Atomic Energy Commission under Contract No. AT(11-1)2126. It has also benefited from the general support of Materials Science at the University of Chicago provided by the Advanced Research Projects Agency. Funding Information: Research supported in part by the National Science Foundation. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 1972

Y1 - 1972

N2 - The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

AB - The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

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U2 - 10.1103/PhysRevLett.29.725

DO - 10.1103/PhysRevLett.29.725

M3 - Article

AN - SCOPUS:3743150339

SN - 0031-9007

VL - 29

SP - 725

EP - 728

JO - Physical Review Letters

JF - Physical Review Letters

IS - 11

ER -

Raman scattering from phonons in polymorphs of Si and Ge

Abstract

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