Radiation tolerance of GaAs1-xSbxsolar cells: A candidate III-V system for space applications

Hadi Ashfari; Brandon K. Durant; Tristan Thrasher; Logan Abshire; Vincent R. Whiteside; Shun Chan; Dongyoung Kim; Sabina Hatch; Mingchu Tang; Jeremiah S. McNatt; Huiyun Liu; Martha R. McCartney; David J. Smith; Ian R. Sellers

doi:10.1109/PVSC43889.2021.9518655

Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications

Hadi Ashfari, Brandon K. Durant, Tristan Thrasher, Logan Abshire, Vincent R. Whiteside, Shun Chan, Dongyoung Kim, Sabina Hatch, Mingchu Tang, Jeremiah S. McNatt, Huiyun Liu, Martha R. McCartney, David J. Smith, Ian R. Sellers

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs1-xSbx absorber.

Original language	English (US)
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	680-682
Number of pages	3
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518655
State	Published - Jun 20 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	6/20/21 → 6/25/21

Keywords

GaAsSb
LILT
radiation tolerance

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC43889.2021.9518655

Cite this

Ashfari, H., Durant, B. K., Thrasher, T., Abshire, L., Whiteside, V. R., Chan, S., Kim, D., Hatch, S., Tang, M., McNatt, J. S., Liu, H., McCartney, M. R., Smith, D. J., & Sellers, I. R. (2021). Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 680-682). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518655

Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications. / Ashfari, Hadi; Durant, Brandon K.; Thrasher, Tristan et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 680-682 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ashfari, H, Durant, BK, Thrasher, T, Abshire, L, Whiteside, VR, Chan, S, Kim, D, Hatch, S, Tang, M, McNatt, JS, Liu, H, McCartney, MR, Smith, DJ & Sellers, IR 2021, Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 680-682, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 6/20/21. https://doi.org/10.1109/PVSC43889.2021.9518655

Ashfari H, Durant BK, Thrasher T, Abshire L, Whiteside VR, Chan S et al. Radiation tolerance of GaAs_1-xSb_xsolar cells: A candidate III-V system for space applications. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 680-682. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518655

@inproceedings{f1fe76b04fbf46d1a9c8502d9d9ff1e4,

title = "Radiation tolerance of GaAs1-xSbxsolar cells: A candidate III-V system for space applications",

abstract = "The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs1-xSbx absorber.",

keywords = "GaAsSb, LILT, radiation tolerance",

author = "Hadi Ashfari and Durant, {Brandon K.} and Tristan Thrasher and Logan Abshire and Whiteside, {Vincent R.} and Shun Chan and Dongyoung Kim and Sabina Hatch and Mingchu Tang and McNatt, {Jeremiah S.} and Huiyun Liu and McCartney, {Martha R.} and Smith, {David J.} and Sellers, {Ian R.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518655",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "680--682",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

TY - GEN

T1 - Radiation tolerance of GaAs1-xSbxsolar cells

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

AU - Ashfari, Hadi

AU - Durant, Brandon K.

AU - Thrasher, Tristan

AU - Abshire, Logan

AU - Whiteside, Vincent R.

AU - Chan, Shun

AU - Kim, Dongyoung

AU - Hatch, Sabina

AU - Tang, Mingchu

AU - McNatt, Jeremiah S.

AU - Liu, Huiyun

AU - McCartney, Martha R.

AU - Smith, David J.

AU - Sellers, Ian R.

PY - 2021/6/20

Y1 - 2021/6/20

N2 - The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs1-xSbx absorber.

AB - The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs1-xSbx absorber.

KW - GaAsSb

KW - LILT

KW - radiation tolerance

UR - http://www.scopus.com/inward/record.url?scp=85115938794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85115938794&partnerID=8YFLogxK

U2 - 10.1109/PVSC43889.2021.9518655

DO - 10.1109/PVSC43889.2021.9518655

M3 - Conference contribution

AN - SCOPUS:85115938794

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 680

EP - 682

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 20 June 2021 through 25 June 2021

ER -