Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Christopher H. Bennett; T. Patrick Xiao; Thomas Leonard; Xun Zhan; Raluca Gearba-Dolocan; Joshua Young; Gyorgy Vizkelethy; Ed Bielejec; David Hughart; Matthew Marinella; Jean Anne Incorvia

doi:10.1109/TNS.2023.3333819

Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Christopher H. Bennett, T. Patrick Xiao, Thomas Leonard, Xun Zhan, Raluca Gearba-Dolocan, Joshua Young, Gyorgy Vizkelethy, Ed Bielejec, David Hughart, Matthew Marinella, Jean Anne Incorvia

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiated parts followed a similar degradation curve to previously tested tunnel junction parts in response to heavy ion irradiation. Microscopy and spectroscopy methods confirm significant damage in some devices.

Original language	English (US)
Pages (from-to)	454-460
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	71
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2023.3333819
State	Published - Apr 1 2024

Keywords

Displacement damage
fault injection
post-complementary metal oxide semiconductor (CMOS) logic
spintronics
total dose effects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2023.3333819

Cite this

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abstract = "Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiated parts followed a similar degradation curve to previously tested tunnel junction parts in response to heavy ion irradiation. Microscopy and spectroscopy methods confirm significant damage in some devices.",

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AU - Young, Joshua

AU - Vizkelethy, Gyorgy

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AB - Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiated parts followed a similar degradation curve to previously tested tunnel junction parts in response to heavy ion irradiation. Microscopy and spectroscopy methods confirm significant damage in some devices.

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Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Abstract

Keywords

ASJC Scopus subject areas

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