Radiation-induced resistance changes in TaOx and TiO2 memristors

D. R. Hughart; A. J. Lohn; P. R. Mickel; P. E. Dodd; M. R. Shaneyfelt; A. I. Silva; E. Bielejec; G. Vizkelethy; B. L. Doyle; M. T. Marshall; M. L. McLain; M. J. Marinella; S. M. Dalton

doi:10.1109/AERO.2014.6836465

Radiation-induced resistance changes in TaO_x and TiO₂ memristors

D. R. Hughart
, A. J. Lohn
, P. R. Mickel
, P. E. Dodd
, M. R. Shaneyfelt
, A. I. Silva
, E. Bielejec
, G. Vizkelethy
, B. L. Doyle
, M. T. Marshall
, M. L. McLain
, M. J. Marinella
, S. M. Dalton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

TaO_x and TiO₂ memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaO_x devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 10¹⁰ cm^-2. TaO_x devices show gradual resistance degradation in the off-state with increasing fluence. TiO₂ devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaO_x devices show more stability and consistent off-state resistances than TiO₂ devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaO_x device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation.

Original language	English (US)
Title of host publication	2014 IEEE Aerospace Conference
Publisher	IEEE Computer Society
ISBN (Print)	9781479916221
DOIs	https://doi.org/10.1109/AERO.2014.6836465
State	Published - 2014
Externally published	Yes
Event	2014 IEEE Aerospace Conference - Big Sky, MT, United States Duration: Mar 1 2014 → Mar 8 2014

Publication series

Name	IEEE Aerospace Conference Proceedings
ISSN (Print)	1095-323X

Other

Other	2014 IEEE Aerospace Conference
Country/Territory	United States
City	Big Sky, MT
Period	3/1/14 → 3/8/14

ASJC Scopus subject areas

Aerospace Engineering
Space and Planetary Science

Access to Document

10.1109/AERO.2014.6836465

Cite this

Hughart, D. R., Lohn, A. J., Mickel, P. R., Dodd, P. E., Shaneyfelt, M. R., Silva, A. I., Bielejec, E., Vizkelethy, G., Doyle, B. L., Marshall, M. T., McLain, M. L., Marinella, M. J., & Dalton, S. M. (2014). Radiation-induced resistance changes in TaO_x and TiO₂ memristors. In 2014 IEEE Aerospace Conference Article 6836465 (IEEE Aerospace Conference Proceedings). IEEE Computer Society. https://doi.org/10.1109/AERO.2014.6836465

Hughart, DR, Lohn, AJ, Mickel, PR, Dodd, PE, Shaneyfelt, MR, Silva, AI, Bielejec, E, Vizkelethy, G, Doyle, BL, Marshall, MT, McLain, ML, Marinella, MJ & Dalton, SM 2014, Radiation-induced resistance changes in TaO_x and TiO₂ memristors. in 2014 IEEE Aerospace Conference., 6836465, IEEE Aerospace Conference Proceedings, IEEE Computer Society, 2014 IEEE Aerospace Conference, Big Sky, MT, United States, 3/1/14. https://doi.org/10.1109/AERO.2014.6836465

@inproceedings{185e3cd62d14421db7cf7e8e177c8435,

title = "Radiation-induced resistance changes in TaOx and TiO2 memristors",

abstract = "TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation.",

author = "Hughart, \{D. R.\} and Lohn, \{A. J.\} and Mickel, \{P. R.\} and Dodd, \{P. E.\} and Shaneyfelt, \{M. R.\} and Silva, \{A. I.\} and E. Bielejec and G. Vizkelethy and Doyle, \{B. L.\} and Marshall, \{M. T.\} and McLain, \{M. L.\} and Marinella, \{M. J.\} and Dalton, \{S. M.\}",

year = "2014",

doi = "10.1109/AERO.2014.6836465",

language = "English (US)",

isbn = "9781479916221",

series = "IEEE Aerospace Conference Proceedings",

publisher = "IEEE Computer Society",

booktitle = "2014 IEEE Aerospace Conference",

note = "2014 IEEE Aerospace Conference ; Conference date: 01-03-2014 Through 08-03-2014",

}

TY - GEN

T1 - Radiation-induced resistance changes in TaOx and TiO2 memristors

AU - Hughart, D. R.

AU - Lohn, A. J.

AU - Mickel, P. R.

AU - Dodd, P. E.

AU - Shaneyfelt, M. R.

AU - Silva, A. I.

AU - Bielejec, E.

AU - Vizkelethy, G.

AU - Doyle, B. L.

AU - Marshall, M. T.

AU - McLain, M. L.

AU - Marinella, M. J.

AU - Dalton, S. M.

PY - 2014

Y1 - 2014

N2 - TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation.

AB - TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation.

UR - https://www.scopus.com/pages/publications/84903974041

UR - https://www.scopus.com/pages/publications/84903974041#tab=citedBy

U2 - 10.1109/AERO.2014.6836465

DO - 10.1109/AERO.2014.6836465

M3 - Conference contribution

AN - SCOPUS:84903974041

SN - 9781479916221

T3 - IEEE Aerospace Conference Proceedings

BT - 2014 IEEE Aerospace Conference

PB - IEEE Computer Society

T2 - 2014 IEEE Aerospace Conference

Y2 - 1 March 2014 through 8 March 2014

ER -