Dopant-Si defect complexes in the surface layer amorphized by dopant ion implantation are identified. The complexes survive solid phase epitaxial regrowth conditions, but dissolve with additional heat treatment. The release of trapped interstitial Si atoms results in a transient enhanced diffusion of the dopant atoms into precipitates. It is shown that for Sb the source of Si interstitials is in the implanted region, while in the case of Ga any complexes formed during implantation do not survive regrowth. However, the deep edge of the radiation damaged region in the Ga case provides a source of interstitials leading to similar transient behavior. The effect of dopant species, implantation temperature, preamorphization, and post-implantation are discussed.
ASJC Scopus subject areas
- Nuclear and High Energy Physics